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| STGP10NB60SFP N-CHANNEL 10A - 600V - TO-220FP PowerMeshTM IGBT TYPE STGP10NB60SFP s VCES 600 VCE(sat) < 1.7 V IC 10 A s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 1 2 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH TM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM (n) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 20 20 10 80 31.5 0.21 -65 to 150 150 Unit V V V A A A W W/C C C (q) Pulse width limited by safe operating area June 2002 1/8 STGP10NB60SFP THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ 4.7 62.5 0.5 C/W C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) VBR(CES) ICES IGES Parameter Collector-Emitter Break-down Voltage Emitter Collector Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0, IC = 1 mA, VGE = 0, VCE = Max Rating ,Tj =25 C VCE = Max Rating ,Tj =125 C VGE = 20V , VCE = 0 Min. 600 20 10 100 100 Typ. Max. Unit V V A A nA ON (1) Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE =15V, VGE =15V, VGE =15V, IC = 5 A, Tj= 25C IC = 10 A, Tj= 25C IC = 10 A, Tj= 125C Min. 2.5 1.15 1.35 1.25 Typ. Max. 5 1.7 Unit V V V V DYNAMIC Symbol gfs Cies Coes Cres Qg ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Latching Current VCE = 400V, IC = 10 A, VGE = 15V Vclamp= 480V, RG= 1k, Tj= 125C 20 Test Conditions VCE = 25 V , IC =10 A VCE = 25V, f = 1 MHz, VGE = 0 Min. 5 610 65 12 33 Typ. Max. Unit S pF pF pF nC A 2/8 STGP10NB60SFP SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 10 A RG = 1K , VGE = 15 V VCC= 480 V, IC = 10 A RG=1K, VGE = 15 V Min. Typ. 0.7 0.46 8 0.6 Max. Unit s s A/s mJ SWITCHING OFF Symbol tc tr(Voff) tf Eoff(**) tc tr(Voff) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Fall Time Turn-off Switching Loss Vclamp = 480 V, IC = 10 A, RGE = 1K , VGE = 15 V Tj = 125 C Test Conditions Vclamp = 480 V, IC = 10 A, RGE = 1K , VGE = 15 V Min. Typ. 2.2 1.2 1.2 5.0 3.8 1.2 1.9 8.0 Max. Unit s s s mJ s s s mJ (q)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail Switching Off Safe Operating Area Thermal Impedance 3/8 STGP10NB60SFP Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold Voltage vs Temperature 4/8 STGP10NB60SFP Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Normalized Break-down Voltage vs Temp. Off Losses vs Temperature 5/8 STGP10NB60SFP Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 6/8 STGP10NB60SFP TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 7/8 STGP10NB60SFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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